About GlobalFoundries:
GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world's most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit .
Summary of Role:
GLOBALFOUNDRIES is seeking highly skilled and motivated individual s with Gallium Nitride ( GaN ) semiconductor device , process, and product expertise for application in RF Power Amplifier s ( PA) in Infrastructure, Radar, and Handset markets. As an expert and individual contributor , you will be working very closely with various teams in GlobalFoundries to develop and qualify world class differentiated GaN semiconductor technologies for manufacture in the 200mm manufacturing fabricator in Essex Junction, Vermont (Fab9). I deal candidate s for this role would possess e xpertise in GaN technology and device development for RF applications, RF device characterization and analysis, device physics includ ing thermal and reliability aspects, as well as design and layout optimization techniques for high power PA layouts targeting performance and reliability. It is desired that the position be resident in Essex Junction, Vermont, but remote location with direct interact ion with the development team s several times a month is possible .
Essential Responsibilities:
Initial and primary responsibilities could include but not limited to the following:
- Technology architect for RF GaN -on-Si technologies and its technology roadmap that optimizes performance, cost, and reliability. Expertise in GaN -on-Si High Electron Mobility Devices, additional (integrated) passive devices and targets, such as capacitors, resistors, and inductors to support a power amplifier circuit application.
- Deep understanding of GaN HEMT device behaviors and methods of optimization, not limited to epi optimization, device layout optimization and scaling considerations, field plate engineering, and (integrated) passive device and metal wiring stack selection to create a technology solution meeting the market and product application requirements.
- Deep understanding of GaN trap effects, analyzing and modeling p ulsed DC and RF characterization results , representation in device model s to accurately capture application needs.
- Demonstrated capability in RFGaN exploratory research activities that provide breakthrough in existing or new market segments. Understand competitive landscape , own ership technology figures -of-merit, provide insights into system differentiation.
- Work closely with the End Market, Product Management, Technology Development, and Physica l Design Kit teams, to define market requirement, product requirements, and ensuring the correct technology specification requirements needed for the device and key figure of merits, as well as the appropriate physical design kit (PDK) tools and applications for the foundry technology offering.
- Collaborate with worldwide teams for a successful RFGaN roadmap - End Market, RF Product Line, Technology Development, Design Enablement etc., to meet on-time delivery of the product development objectives .
Other Responsibilities:
- Assist with the building and maintaining world-class product and technology development teams, by assisting with recruiting activities.
Required Qualifications: - Education: Minimum Master's Degree in Electrical Engineering , Microelectronics, Solid State Physics or other relevant engineering disciplines.
- Experience: Minimum 7 years of relevant engineering experience.
- Travel Requirements: Variable, potentially up to 20%.
- Language Fluency: English (written & verbal)
- A comprehensive knowledge of modern device physics: FET, BJT, LDMOS, and HEMT devices in bulk silicon, silicon-on-insulator (SOI), silicon germanium ( SiGe ), and/or compound semiconductor ( e.g. GaN , SiC , etc ) technologies.
- A comprehensive knowledge of semiconductor devices, electrical testing and analysis methods.
- Knowledge of ADS or Cadence design tools for RF power amplifier designs.
- Knowledge in device reliability mechanisms, device physical characterization (SIMS, TEM, SEM, LSM, Scanning Capacitance, AFM) , and device electrical characterization.
- Strong problem-solving skills.
- Strong communication skills.
- The ability to effectively work with colleagues, clients, partners, and unit process engineers.
Preferred Qualifications:
- Education: PhD in Electrical Engineering, Microelectronics, Solid State Physics or other relevant engineering discipline .
- Experience: Minimum 3-5 years of relevant industrial experience with GaN Product and/or Technology Development.
- Experience and comprehensive knowledge of GaN -on-Si HEMT devices.
- Experience and comprehensive knowledge of Power Amplifier circuit design.
- Experience and comprehensive knowledge of semiconductor device electrical testing and analysis methods.
- Excellent interpersonal skills, energetic, motivated, and self-driven.
- Demonstrate ability to work well within a global matrixed team or environment with minimal supervision
- Outstanding and demonstrated communication skills - both written and verbal
- Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies.
- Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs
- Demonstrated ability to meet deadlines and commitments
Expected Salary Range
$131,900.00 - $241,500.00
The exact Salary will be determined based on qualifications, experience and location.
If you need a reasonable accommodation for any part of the employment process, please contact us by email at and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.
An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations.
GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory.
All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law