Memory Design Engineer

Canada

Raas Infotek
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Hi,


Hope you are doing well.


I have an immediate requirement, please let me know if you are interested with this role .



Title : Memory Design Engineer/Memory Circuit designer

Location : Remote

Mode: Contract

Type : W2/C2C


Responsibilities :

Lead the design and development of memory layouts for complex ICs, including:

High-density SRAM memories

Specialty memory blocks (e.g., memory, CAM)

Define memory architecture and sub-block specifications

Develop and implement advanced layout techniques for low-power, high-speed

memory design

Collaborate with design and verification teams to ensure seamless integration

Mentor junior engineers and provide technical guidance

Stay up-to-date on the latest memory design trends and technologies

Perform comprehensive physical verification- follow the design rules given

by foundry( example) metal density, space etc) using DRC, DSM, LVS, and

other tools

Drive Design for Manufacturability (DFM) and Design for Yield (DFY) initiatives

Analyze layouts for potential power integrity and signal integrity issues

May involve scripting automation for layout tasks using languages like PERL,

Shell, TCL, or Skill

Non Volatile / Volatile -Memory

What domain industries to be targeted:

-Foundries- Chip ( Intel, NXP, Qcom, Broadcom, AMD), Ulkasemi)


Memory Circuit Design Engineer


Qualification Required:

Using CADENSE and SPECTRE( tool used for circuit design)

Typically requires minimum of 2-13+ years of experience in Memory Design with

mainstream SRAM tools

Bachelors / Master Degree in E&E and E&C

Strong communication and team work skills

Roles And Responsibilities


Good understanding of SRAM architecture, Critical Path Modelling, Full Cut

Analysis and Monte Carlo Simulations.

Exposure to full embedded memory design flow: Architecture, circuit design,

physical implementation, compiler automation, characterization, timing and

model generation.

Good experience in design verification: Sense amplifier analysis, self-time

analysis and marginality analysis.

Good exposure to validation of the characterized data.

Strong knowledge of physical implementation impact on circuit performance.

Experience with the most advanced technology nodes up to 28nm and below

Qualification Required:


Typically requires minimum of 2-13+ years of experience in Memory Design with

mainstream SRAM tools

Bachelors / Master Degree in E&E and E&C

Strong communication and team work skills

Roles And Responsibilities


Good understanding of SRAM architecture, Critical Path Modelling, Full Cut

Analysis and Monte Carlo Simulations.

Exposure to full embedded memory design flow: Architecture, circuit design,

physical implementation, compiler automation, characterization, timing and

model generation.

Good experience in design verification: Sense amplifier analysis, self-time

analysis and marginality analysis.

Good exposure to validation of the characterized data.

Strong knowledge of physical implementation impact on circuit performance.

Experience with the most advanced technology nodes up to 28nm and below




Thank you,

Deepak Singh

Email:

Date Posted: 04 June 2025
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