Principal Engineer Microelectronic Semiconductors

At Northrop Grumman, our employees have incredible opportunities to work on revolutionary systems that impact people's lives around the world today, and for generations to come. Our pioneering and inventive spirit has enabled us to be at the forefront of many technological advancements in our nation's history - from the first flight across the Atlantic Ocean, to stealth bombers, to landing on the moon. We look for people who have bold new ideas, courage and a pioneering spirit to join forces to invent the future, and have fun along the way. Our culture thrives on intellectual curiosity, cognitive diversity and bringing your whole self to work - and we have an insatiable drive to do what others think is impossible. Our employees are not only part of history, they're making history.
At Northrop Grumman, our employees have incredible opportunities to work on revolutionary systems in air and space that impact people's lives around the world today, and for generations to come. Our work preserves freedom and democracy, and advances human discovery and our understanding of the universe. We look for people who have bold new ideas, courage and a pioneering spirit to join forces to invent the future, and have a lot of fun along the way. Our culture thrives on intellectual curiosity, cognitive diversity and bringing your whole self to work - and we have an insatiable drive to do what others think is impossible. Our employees are not only part of history, they're making history. Northrop Grumman Space Systems has an opening for either aPrincipal Engineer Microelectronic Semiconductors - Device Design/ Sr.Principal Engineer Microelectronic Semiconductors - Device Designto join our team of qualified, diverse individuals. This position will be located in Manhattan Beach, CA. The selected candidate will support the research and development of advanced microelectronics products for the Northrop Grumman Microelectronics Center. Candidate will be responsible for leading the development and maturation of novel III-V semiconductor technologies including, but not limited to, advanced GaN HEMT technology nodes. Candidate will be responsible for advancing new technologies from early research and development through production. Responsibilities will include millimeter wave (mmW) transistor design and simulation, experimental device development, root cause analysis, and RF device characterization. The selected candidate should thrive in a fast-paced work environment with high expectations, significantly diverse assignments, and multidisciplinary team settings across all levels. Candidate must be comfortable in a lab environment and be able to collaborate closely with process engineers, circuit designers, and test engineers. This requisition may be filled at the Principal T03 level or the Sr. Principal T04 level based on qualifications listed below. Basic Qualifications:
Basic Qualification for the Principal T03 level: Bachelor's degree in a Science, Technology, Engineering or Mathematics (STEM) discipline from an accredited university and 5 years of engineering experience in an aerospace environment; OR Master's degree in STEM and 3 years of engineering experience in an aerospace environment; OR Ph.D. degree in STEM from an accredited institution
Basic Qualification for the Sr. Principal T04 level: Bachelor's degree in a Science, Technology, Engineering or Mathematics (STEM) discipline from an accredited university and 9 years of engineering experience in an aerospace environment; OR Master's degree in STEM and 7 years of engineering experience in an aerospace environment; OR Ph.D. degree in STEM from an accredited institution and 4 years of engineering experience in an aerospace environment
Experience with semiconductor device processing
Expertise in semiconductor device physics
Proficiency in Design-of-Experiments methodologies
Willingness to obtain and maintain a DoD ClearancePreferred Qualifications:
Ph.D. degree in Electrical Engineering, Chemical Engineering, or Physics
Experience with MMIC design and fabrication
Direct experience with GaN transistor development
Demonstrated track record of applying scientific principles to advance device performance
Experience with technology maturation and transition from R&D to manufacturing
Excellent communication, interpersonal skills, and the ability to interface with all levels of employees and management
Ability to prioritize and perform on multiple tasks simultaneouslySalary Range: $107,300 - $160,900
Salary Range 2: $133,000 - $199,600 The above salary range represents a general guideline; however, Northrop Grumman considers a number of factors when determining base salary offers such as the scope and responsibilities of the position and the candidate's experience, education, skills and current market conditions. Employees may be eligible for a discretionary bonus in addition to base pay. Annual bonuses are designed to reward individual contributions as well as allow employees to share in company results. Employees in Vice President or Director positions may be eligible for Long Term Incentives. In addition, Northrop Grumman provides a variety of benefits including health insurance coverage, life and disability insurance, savings plan, Company paid holidays and paid time off (PTO) for vacation and/or personal business.
The application period for the job is estimated to be 20 days from the job posting date. However, this timeline may be shortened or extended depending on business needs and the availability of qualified candidates. Northrop Grumman is committed to hiring and retaining a diverse workforce. We are proud to be an Equal Opportunity/Affirmative Action Employer, making decisions without regard to race, color, religion, creed, sex, sexual orientation, gender identity, marital status, national origin, age, veteran status, disability, or any other protected class. For our complete EEO/AA and Pay Transparency statement, please visit . U.S. Citizenship is required for all positions with a government clearance and certain other restricted positions.